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TO-220 5A Thyristor
TF521M, TF541M, TF561M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=5A qGate trigger current: IGT=15mA max
External Dimensions
(Unit: mm)
16.7max 3.00.2 8.80.2 10.4max
5.0max 2.1max
3.750.1
a b
0.15 1.35
12.0 min
4.0 max
+0.2 0.65 -0.1 0.1 2.5
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
0.1 2.5
0.2 1.7
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG (AV) Tj Tstg
Ratings
TF521M 200 200 300 300 TF541M 400 400 500 500 5.0 7.8 80 2.0 10 5.0 5.0 0.5 - 40 to +125 - 40 to +125 TF561M 600 600 700 700
Unit
V V V V A A A A V V W W C C
Conditions
Tj= -40 to +125C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=96C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 3.0 0.1 4.0 50 30 3.0 15
Unit
mA mA V V mA V mA V/S S C/W
Conditions
Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=10A VD=6V, RL=10, TC=25C VD=1/2xVDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case
10
TF521M, TF541M, TF561M
vT - iT Characteristics (max)
100 50
ITSM Ratings
100
Initial junction temperature Tj=125C
ITSM
Gate Characteristics
Gate trigger voltage VGT (V)
12
80
10 ms 1 cycle
iT (A)
vGF (V)
1
On-state current
10 5
Tj = 25C
8
60
0
Gate voltage
0
10
Tj=25C
Tj =125C
Surge on-state current ITSM (A)
10
P GM = 5W
20
Tj= -20C
30
6 4 2 0
Gate trigger current IGT (mA)
40
1 0.5 0.3 1.0
20
See graph at the upper right
0 2.0 3.0 4.0
On-state voltage
vT ( V )
1
5
10
50
100
0
1
2
Tj= -40C
2
3
Number of cycle
Gate current
iGF (A)
IT(AV) - PT(AV) Characteristics
0
IT(AV) - Tc Ratings
150
50Hz Half-cycle sinewave : Conduction angle 180 0
8
15
Average on-state power PT(AV) (W)
12
7 6 5
30 =
0 180
0
18
DC
50Hz Half-cycle sinewave : Conduction angle
0
Case temperature TC (C)
125
90
60
100 120 =30 150 180 60 90
3 2 1 0 0 2 4 6 8
50
25 0
0
2
4
6
DC 8
4
75
Average on-state current IT(AV) (A)
Average on-state current IT(AV) (A)
Pulse trigger temperature Characteristics vgt (Typical)
30
trigger VGT DC gateat 25C voltage
Pulse trigger temperature Characteristics igt (Typical)
IH temperature Characteristics
(Typical)
igt
50%
trigger IGT DC gateat 25C current
50%
)
vgt tw
)
30 10 TC=- 40C -20C 25C 75C 125C
30
(RGK=1k)
tw
10 TC =- 40C -20C 25C 75C 125C 1
Holding current IH (mA)
10 3 10 4
(
20
(
vgt ( Gate trigger voltage) at Ta and tw
igt (Gate trigger current ) at Ta and tw
1
10
0.1 0.05 0.5 1 10 10 2 10 3 10 4
0.1 10 10 2 0 -40 0 25 50 75 100 125
0.05 0.5 1
Pulse width
tw (s)
Pulse width
tw (s)
Junction temperature Tj (C)
VGT temperature Characteristics
(Typical)
1.0 (VD=6V, RL=10)
IGT temperature Characteristics
(Typical)
12 10 8 (VD=6V, RL=10)
Transient thermal resistance Characteristics (Junction to case)
10
0.8
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
0.6
6
Transient thermal resistance
rth (C/W)
1 0.1 1 10
0.4
4 2 0 -40
0.2
0 -40
0
25
50
75
100
125
0
25
50
75
100
125
10 2
10 3
10 4
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
11

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